Thin film deposition from reactive plasma.

Vacuum arc plasma generation and thin film deposition from a TiB2 cathode

Atomic layer deposition (ALD): from precursors to thin film structures

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...

Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

Parallel Particle Simulations of Thin-Film Deposition

Thin-film growth by sputter deposition is a manufacturing process that is well suited for study by particle simulation methods. The authors report on the development of a high performance, parallel, molecular-dynamics software package that simulates atomic metal systems under sputter deposition conditions. The package combines advanced techniques for parallel molecular dynamics with specialized...

Amorphous thin film growth: minimal deposition equation

A nonlinear stochastic growth equation is derived from (i) the symmetry principles relevant for the growth of vapor deposited amorphous films, (ii) no excess velocity, and (iii) a low-order expansion in the gradients of the surface profile. A growth instability in the equation is attributed to the deflection of the initially perpendicular incident particles due to attractive forces between the ...